Performance of Adaptive Dual-Dropping ILUT
Preconditioners in Semiconductor
Dopant Diffusion Simulation

Jun Zhang
Department of Computer Science
University of Kentucky
773 Anderson Hall
Lexington, KY 40506-0046, USA

Anand L. Pardhanan and Graham F. Carey
TICAM, CFD Laboratory
University of Texas at Austin
Austin, Texas 78712, USA

Abstract

Preconditioning strategies based on incomplete LU factorization using thresholding with dual dropping (ILUT) are investigated for iterative solution of sparse linear systems arising in semiconductor dopant diffusion modeling. Of particular interest are questions associated with selection and adaption of threshold parameters with spatial resolution, timestep in the adaptive ODE integrator and the problem physics. We investigate these issues and carry out detailed numerical studies in one- and two-dimensions for a representative phosphorus diffusion model. Guidelines for optimally selecting the threshold parameters are deduced from the results, and strategies for adaptive parameter selection are presented.


Key words: semiconductor TCAD, process modeling, time integration, iterative methods, ILUT preconditioning techniques, adaptive thresholding

Mathematics Subject Classification: 65M06, 65N12.


Download the compressed postscript file dopant.ps.gz, or the PDF file dopant.pdf.gz.
This paper has been published in International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, Vol. 15, No. 2, pp. 147-167 (2002).

Technical Report 304-00, Department of Computer Science, University of Kentucky, Lexington, KY, 2000.

This research has been supported in part by NSF grants # 791AT-51067A and CCR-9902022, by the State of Texas Advanced Technology Program and by a private grant from Object Reservoir.